Atomic layer deposition of epitaxial ferroelectric barium titanate on Si(001) for electronic and photonic applications
Edward L. Lin, Agham B. Posadas, Lu Zheng, J. Elliott Ortmann, Stefan Abel, Jean Fompeyrine, Keji Lai, Alexander A. Demkov, John G. Ekerdt
Source abstract
Epitaxial barium titanate (BTO) thin films are grown on strontium titanate-buffered Si(001) using atomic layer deposition (ALD) at 225 °C. X-ray diffraction confirms compressive strain in BTO films after the low temperature growth for films as thick as 66 nm, with the BTO c-axis oriented in the out-of-plane direction. Postdeposition annealing above 650 °C leads to an in-plane c-axis orientation. Piezoresponse force microscopy was used to verify the ferroelectric switching behavior of ALD-grown films. Electrical and electro-optic measurements confirm BTO film ferroelectric behavior in out-of-plane and in-plane directions, respectively, at the micrometer scale.
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