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The study of synaptic plasticity in the ZnO memristor elements for neuromorphic AI

R. V. Tominov, Z. E. Vakulov, D. S. J. Rodriguez, I. S. Ugryumov, V. A. Smirnov

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Published: Mar 11, 2025

DOI: 10.1142/s2010135x2540003x

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Source abstract

The paper presents the results of experimental studies of synaptic plasticity in a memristive memory element based on nanocrystalline ZnO films grown by pulsed laser deposition. The obtained results can be used in the development of technological bases for the formation of high-performance multi-level artificial synapses for elements of neuroelectronics and hardware neural networks.

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