Influence of HZO deposition temperature on the resistive switching behavior of Ag/HZO/LCMO heterostructures
Jiangjuan Chen, Jiqiang Jia, Tianjian Mi, Lei Yang, Cheng Ma
Source abstract
Hf0.5Zr0.5O2 (HZO) thin films exhibit excellent electrically induced resistive switching (RS) properties and have application potential in nonvolatile memories and neuromorphic devices. Most HZO-based RS devices employ metal electrodes. Compared with metals, conductive oxides developed in recent years offer better structural compatibility and oxidation resistance while enabling the regulation of defects and oxygen vacancies, potentially inducing novel RS phenomena. In this work, a preferentially (00l)-oriented conductive oxide La0.67Ca0.33MnO3 (LCMO) layer was deposited on (00l)-oriented LaAlO3 substrates by pulsed laser deposition. HZO thin films were then grown on the LCMO layer to form HZO/LCMO heterostructures. The effects of deposition temperature and electrode type on the RS behavior of HZO thin films were systematically investigated. Deposition temperature significantly influenced the RS properties of HZO thin films. At deposition temperatures below 450 °C, the low crystallinity and disordered structure were unfavorable for the formation of stable oxygen-vacancy conductive filament pathways, and thus, no obvious RS behavior was observed. When the deposition temperature increased to 450 and 520 °C, the migration of oxygen vacancies near the LCMO interface modulated the electrical conductivity of LCMO, leading to an unconventional clockwise bipolar RS behavior. At deposition temperatures of 580 and 650 °C, the devices maintained clockwise RS behavior in the low-voltage region, whereas they transformed into counterclockwise RS behavior in the high-voltage region, which was dominated by the oxygen-vacancy conductive filament mechanism in the HZO layer. These results provide experimental evidence for the interface design and performance optimization of oxide-electrode-based resistive switching devices.
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