Asymmetric Hysteresis Loops, Leakage Current and Capacitance Voltage Behaviors in Ferroelectric PZT Films Deposited on a Pt/Al2O3/SiO2/Si Substrate by MOCVD method with a vapor-deposited Gold Top Electrode

Masruroh, Masayuki TODA

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Source: Crossref

Published: Jan 1, 2011

DOI: 10.7763/ijapm.2011.v1.28

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