Investigating the structural, optical and electrical properties of Zn doped NiO thin films
Chouaieb ZAOUCHE, Sofiane SAGGAÏ, Laid DAHBI, Said BENRAMACHE, Abdelouahab GAHTAR, Cherif MAGHNI
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Source: Crossref
Published: Jun 30, 2026
DOI: 10.59277/pra-ser.a.27.2.08
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In this work, we investigated the effect of Zn doping levels on the physical properties of Ni1-xZnxO thin films. The Zn concentrations were 0, 2, 4, 8, and 12 at.%. X-ray diffraction (XRD) patterns indicate that the Ni1-xZnxO thin films are polycrystalline with a cubic crystal structure. The transmission spectra reveal that Ni1-xZnxO thin films exhibit good optical transparency in the visible region, ranging from 75% to 85%. The optical band gap energy of the films varies between 3.46 and 3.63 eV. The Urbach energy ranges from 246 to 290 meV. However, the Ni1-xZnxO thin film exhibits the highest Urbach energy, indicating a higher density of defects. This sample also shows the minimum optical band gap energy. Furthermore, the Ni1-xZnxO thin film demonstrates the highest electrical conductivity, reaching 0.013(Ω·cm)^-1.
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